hd db 60 features i o 2.0a vrrm 50v-1000v high surge current capability applications : from 1 to 7 x marking polarity: color band denotes cathode glass passivated chip db20x 1 h igh diode semiconductor db plastic-encapsulate bridge rectifier general pu rp ose 1 phase bridge rectifier applications db DB201 thru db207 db2 item symbol unit conditions 01 02 03 04 05 06 07 repetitive peak reverse voltage v rrm v 50 100 200 400 600 800 1000 average rectified output current i o a 60hz sine wave, r-load ,ta=25 2.0 surge(non- repetitive)forward current i fsm a 60h z sine wave, 1 cycle, t j =25 60 current squared time i 2 t a 2 s 1ms t<8.3ms tj=25 rating of per diode 15 storage temperature t stg -55 ~+150 junction temperature t j -55 ~+150 electrical characteristics t a =25 unless otherwise specified item symbol unit test condition max peak forward voltage v fm v i fm =2.0a, pulse measurement, rating of per diode 1.1 peak reverse current i rrm a v rm =v rrm , pulse measurement, rating of per diode 10 r j-a between junction and ambient, on glass-epoxi substrate 68 thermal resistance r j-l /w between junction and lead 15 v 35 70 140 280 420 560 700 max i mum r m s v rms vo ltage
typical characteristics 2 h igh diode semiconductor 020406080100 0.01 0.1 1.0 10 100 voltage(%) ir(ua) tj=150 tj=25 fig4:typical reverse characteristics 0 0 0.4 io(a) ta ( ) fig1:io-ta curve 160 sine wave r-load free in air 40 80 120 0.8 1.2 1.6 2.0 2.4 1 0 ifsm(a) 2 5 10 20 50 100 10 sine wave non-repetitive tj=25 fig2:surge forward current capadility number of cycles 0 8.3ms 1cycle ifsm 8.3ms 20 30 40 50 60 70 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.02 0.05 vf(v) if(a) fig3: forward voltage 0.1 1 2 4 6 0.5 ta=25
3 oe emcoctor .350. .300. .0451.14 .0350. .154. .1503.1 .255.5 .245.2 .315.0 .25.24 .2055.2 .155.0 .335.51 .320.13 .1303.30 .1203.05 .0230.5 .010.4 .02.03 .051.2 .051.0 .0551.3 .0130.33 .000.22 -
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